STABILITY, RECONSTRUCTION, AND ELECTRONIC-PROPERTIES OF DIAMOND (100) AND (111) SURFACES

被引:120
作者
FRAUENHEIM, T
STEPHAN, U
BLAUDECK, P
POREZAG, D
BUSMANN, HG
ZIMMERMANNEDLING, W
LAUER, S
机构
[1] FRAUNHOFER INST ANGEW MAT FORSCH,D-28777 BREMEN,GERMANY
[2] UNIV FREIBURG,FREIBURGER MAT FORSCH INST,D-79104 FREIBURG,GERMANY
[3] UNIV BASEL,INST PHYS,CH-4056 BASEL,SWITZERLAND
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 24期
关键词
D O I
10.1103/PhysRevB.48.18189
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results of scanning-tunneling-microscopy (STM) and molecular-dynamics (MD) annealing studies based on quantum-mechanically derived interatomic forces using a semiempirical density-functional approach are combined for analyzing diamond surface structures. Experimentally obtained STM images of diamond (100) and (111) faces on polycrystalline films reveal (1X1),(root 3X root 3)R30 degrees, and possible (2X1) structures. The (100) faces show stable (2X1) reconstruction with dimer formation. Surface structures with and without adsorbed hydrogen are determined and their stability is obtained by MD simulated annealing techniques. The bulklike and (root 3X root 3) R30 degrees structures; as they are observed on grown (111) facets, are attributed to the two different single atomic (111) layers, which support growth mechanisms, in which the two alternating single atomic layers grow in turn and not simultaneously. The equilibrium surface modifications which have been realized are electronically characterized by investigating the local electronic density of states at selected surface atoms. This information is compared and related to the features seen in the STM images.
引用
收藏
页码:18189 / 18202
页数:14
相关论文
共 69 条
[1]   COMPUTATIONAL STUDIES OF HETEROGENEOUS REACTIONS OF SIH2 ON SI(111) SURFACES [J].
AGRAWAL, PM ;
THOMPSON, DL ;
RAFF, LM .
SURFACE SCIENCE, 1988, 195 (1-2) :283-306
[2]   COMPUTATIONAL STUDIES OF HETEROGENEOUS REACTIONS OF SIH2 ON RECONSTRUCTED SI(111)-(7X7) AND SI(111)-(1X1) SURFACES [J].
AGRAWAL, PM ;
THOMPSON, DL ;
RAFF, LM .
JOURNAL OF CHEMICAL PHYSICS, 1989, 91 (08) :5021-5029
[3]   TRANSFERABILITY OF BULK EMPIRICAL POTENTIALS TO SILICON MICROCLUSTERS - A CRITICAL-STUDY [J].
ANDREONI, W ;
PASTORE, G .
PHYSICAL REVIEW B, 1990, 41 (14) :10243-10246
[4]   LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].
ANGUS, JC ;
HAYMAN, CC .
SCIENCE, 1988, 241 (4868) :913-921
[5]   RECURSION METHOD IN THE K-SPACE REPRESENTATION [J].
ANLAGE, SM ;
SMITH, DL .
PHYSICAL REVIEW B, 1986, 34 (04) :2336-2345
[6]  
ANTHONY TR, 1990, MATER RES SOC SYMP P, V162, P61, DOI 10.1557/PROC-162-61
[7]   MNDO ANALYSIS OF THE OXIDIZED DIAMOND(100) SURFACE [J].
BADZIAG, P ;
VERWOERD, WS .
SURFACE SCIENCE, 1987, 183 (03) :469-483
[8]   A METHOD AND RESULTS FOR REALISTIC MOLECULAR DYNAMIC SIMULATION OF HYDROGENATED AMORPHOUS-CARBON STRUCTURES USING A SCHEME CONSISTING OF A LINEAR COMBINATION OF ATOMIC ORBITALS WITH THE LOCAL-DENSITY APPROXIMATION [J].
BLAUDECK, P ;
FRAUENHEIM, T ;
POREZAG, D ;
SEIFERT, G ;
FROMM, E .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (30) :6389-6400
[9]  
BLAUDECK P, 1993, SOLID STATE COMMUN, V85, P992
[10]   EMPIRICAL POTENTIAL FOR HYDROCARBONS FOR USE IN SIMULATING THE CHEMICAL VAPOR-DEPOSITION OF DIAMOND FILMS [J].
BRENNER, DW .
PHYSICAL REVIEW B, 1990, 42 (15) :9458-9471