NEW METHOD FOR THE MEASUREMENT OF SURFACE ELECTRICAL CONDUCTIVITY OF SI AND GE BY CLEAVAGE

被引：13

作者：

HANDLER, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 06期

关键词：

D O I：

10.1063/1.1753887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：96 / 97

页数：2

共 12 条

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[2]

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[3]

ALLEN FG, 1963, B AM PHYS SOC, V8, P198

[4]

EISENHOUR S, 1962, THESIS U ILLINOIS

[5]

FARNSWORTH HE, 1963, ANN NY ACAD SCI, V101, P658

[6]

FRANKL DR, COMMUNICATION

[7] COMPARISON OF STRUCTURES OF SURFACES PREPARED IN HIGH VACUUM BY CLEAVING AND BY ION BOMBARDMENT AND ANNEALING [J].

HANEMAN, D .

PHYSICAL REVIEW, 1960, 119 (02) :563-566

[8] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

[9] SURFACE STATES ON CLEAVED SILICON [J].

PALMER, DR ;

DAUENBAUGH, CE ;

MORRISON, SR .

PHYSICAL REVIEW LETTERS, 1961, 6 (04) :170-&

[10] DENSITY AND ENERGY OF SURFACE STATES ON CLEAVED SURFACES OF GERMANIUM [J].

PALMER, DR ;

MORRISON, SR ;

DAUENBAUGH, CE .

PHYSICAL REVIEW, 1963, 129 (02) :608-&

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