OBSERVATION OF AVALANCHE PROPAGATION BY MULTIPLICATION ASSISTED DIFFUSION IN P-N-JUNCTIONS

被引：40

作者：

LACAITA, A ^{[1
]}

MASTRAPASQUA, M ^{[1
]}

GHIONI, M ^{[1
]}

VANOLI, S ^{[1
]}

机构：

[1] CNR,CTR ELETTR QUANT & STRUMENTAZ ELETTR,I-20133 MILAN,ITALY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 05期

关键词：

D O I：

10.1063/1.103629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated for the first time the propagation of the avalanche multiplication over the area of p-n junctions reverse biased above the breakdown voltage. The multiplication process spreads from the point where the avalanche is triggered to the whole junction area with a speed proportional to the final steady-state value of the avalanche current. The values of the propagation speed suggest that the phenomenon is due to diffusion of carriers assisted by avalanche multiplication. This effect strongly affects the rise of the avalanche current and turns out to limit the performance of single photon avalanche diodes.

引用

页码：489 / 491

页数：3

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