DIELECTRIC-PROPERTIES OF VACUUM-DEPOSITED YB2O3 FILMS

被引:15
作者
DUTTA, CR
BARUA, K
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D O I
10.1016/0040-6090(82)90010-4
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T [工业技术];
学科分类号
08 ;
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页码:281 / 285
页数:5
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[1]   TEMPERATURE CHARACTERISTICS OF VACUUM DEPOSITED DIELECTRIC FILMS [J].
FELDMAN, C ;
HACSKAYLO, M .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (12) :1459-&
[2]   AC BEHAVIOR AND DIELECTRIC-RELAXATION IN INDIUM OXIDE-FILMS [J].
GOSWAMI, A ;
GOSWAMI, AP .
PRAMANA, 1977, 8 (04) :335-347
[3]   AC BEHAVIOR OF VACUUM-DEPOSITED PRASEODYMIUM OXIDE-FILMS [J].
GOSWAMI, A ;
GOSWAMI, AP .
THIN SOLID FILMS, 1974, 20 (01) :S3-S6
[4]   DIELECTRIC BEHAVIOR OF DYSPROSIUM OXIDE-FILMS [J].
GOSWAMI, A ;
VARMA, RR .
THIN SOLID FILMS, 1975, 28 (02) :157-165
[5]   DIELECTRIC AND OPTICAL PROPERTIES OF ZNS FILMS [J].
GOSWAMI, A ;
GOSWAMI, AP .
THIN SOLID FILMS, 1973, 16 (02) :175-185
[6]   DIELECTRIC BEHAVIOR OF LANTHANUM OXIDE THIN-FILM CAPACITORS [J].
MAHALINGAM, T ;
RADHAKRISHNAN, M ;
BALASUBRAMANIAN, C .
THIN SOLID FILMS, 1981, 78 (03) :229-233
[7]   DIELECTRIC PROPERTIES OF THIN ALUMINUM FLUORIDE FILMS [J].
PHAHLE, AM ;
HILL, AE ;
CALDERWOOD, JH .
THIN SOLID FILMS, 1974, 22 (01) :67-74
[8]   ALTERNATING CURRENT ELECTRICAL PROPERTIES OF HIGHLY DOPED INSULATING FILMS [J].
SIMMONS, JG ;
NADKARNI, GS ;
LANCASTER, MC .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :538-+
[10]   PHOTOCURRENT, SPACE-CHARGE BUILDUP, AND FIELD EMISSION IN ALKALI HALIDE CRYSTALS [J].
VONHIPPEL, A ;
GROSS, EP ;
JELATIS, JG ;
GELLER, M .
PHYSICAL REVIEW, 1953, 91 (03) :568-579