DISTRIBUTED FEEDBACK STRAINED LAYER QUANTUM-WELL HETEROSTRUCTURE 980 NM LASER FABRICATED BY 2-STEP METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10

作者：

COCKERILL, TM

HONIG, J

FORBES, DV

COLEMAN, JJ

机构：

[1] Microelectronics Laboratory, Materials Research Laboratory, University of Illinois, Urbana, IL 61801

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.108589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented for single longitudinal mode, strained-layer AlGaAs-GaAs-InGaAs quantum well heterostructure distributed feedback lasers emitting near 980 nm. Device fabrication consists of conventional holographic photolithography and two-step metalorganic chemical vapor deposition growth. Regrowth over a GaAs grating layer and GaAs solid phase mass transport are discussed. The lasers are single mode up to twice I(th), have differential quantum efficiencies of 50%, and have threshold current densities of 600 A/cm2.

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页码：820 / 822

页数：3

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