A MODEL FOR POLYSILICON MOSFETS

[1] AHMED SS, 1986, IEEE T ELECTRON DEVI, V33

[2] ANWAR AFM, 1985, DEC MAT RES SOC FALL

[3] APPLETON BR, 1982, LASER ELECTRON BEAM

[4] CHARGE-SHEET MODEL OF MOSFET [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 345 - 355

[5] Colinge J. P., 1982, International Electron Devices Meeting. Technical Digest, P444

[6] COLINGE JP, 1980, IEEE T ELECTRON DEVI, V30, P197

[7] Depp S. W., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P297

[8] DEPP SW, 1980, DEC IEDM, P703

[9] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 933 - 940

[10] HO PS, 1982, THIN FILMS INTERFACE

[1] AHMED SS, 1986, IEEE T ELECTRON DEVI, V33

[2] ANWAR AFM, 1985, DEC MAT RES SOC FALL

[3] APPLETON BR, 1982, LASER ELECTRON BEAM

[4] CHARGE-SHEET MODEL OF MOSFET [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 345 - 355

[5] Colinge J. P., 1982, International Electron Devices Meeting. Technical Digest, P444

[6] COLINGE JP, 1980, IEEE T ELECTRON DEVI, V30, P197

[7] Depp S. W., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P297

[8] DEPP SW, 1980, DEC IEDM, P703

[9] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 933 - 940

[10] HO PS, 1982, THIN FILMS INTERFACE