ELECTRON-MOBILITY IN SEMICONDUCTORS

被引:6
作者
NETTEL, S
ANLAGE, S
机构
来源
PHYSICAL REVIEW B | 1982年 / 26卷 / 04期
关键词
D O I
10.1103/PhysRevB.26.2076
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2076 / 2084
页数:9
相关论文
共 20 条
[1]   QUANTUM THEORY OF TRANSPORT COEFFICIENTS .1. [J].
BAUMANN, K ;
RANNINGER, J .
ANNALS OF PHYSICS, 1962, 20 (01) :157-170
[2]   IRREVERSIBILITY AND GENERALIZED NOISE [J].
CALLEN, HB ;
WELTON, TA .
PHYSICAL REVIEW, 1951, 83 (01) :34-40
[3]   Stochastic problems in physics and astronomy [J].
Chandrasekhar, S .
REVIEWS OF MODERN PHYSICS, 1943, 15 (01) :0001-0089
[4]  
CONWELL EM, 1967, SOLID STATE PHYSICS
[5]   MOMENTUM DISTRIBUTION OF ELECTRONS IN POLAR SEMICONDUCTORS FOR HIGH ELECTRIC-FIELD [J].
DEVREESE, JT ;
EVRARD, R .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 78 (01) :85-92
[6]   MOBILITY OF SLOW ELECTRONS IN A POLAR CRYSTAL [J].
FEYNMAN, RP ;
HELLWARTH, RW ;
IDDINGS, CK ;
PLATZMAN, PM .
PHYSICAL REVIEW, 1962, 127 (04) :1004-&
[7]  
FEYNMAN RP, 1972, STATISTICAL MECHANIC, P58
[8]   THE DRIFT MOBILITY OF ELECTRONS IN SILICON [J].
HAYNES, JR ;
WESTPHAL, WC .
PHYSICAL REVIEW, 1952, 85 (04) :680-680
[9]  
Kadanoff L. P., 1963, PHYS REV, V130, P1364