SILICON SURFACE-BARRIER DETECTOR RESOLUTION IN THE 2-30 MEV RANGE

被引：18

作者：

OSTLING, M ^{[1
]}

PETERSSON, CS ^{[1
]}

JOHANSSON, P ^{[1
]}

WIKSTROM, A ^{[1
]}

POSSNERT, G ^{[1
]}

机构：

[1] TANDEM ACCELERATOR LAB,S-75121 UPPSALA,SWEDEN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90400-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：729 / 734

页数：6

共 8 条

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[2]

Chu W.-K., 1978, BACKSCATTERING SPECT

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WHITEHEAD, AB .

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[4]

JOHANSSON P, 1984, TLU11785 TAND ACC LA

[5]

LINDHARD J, 1963, K DAN VIDENSK SELSK, V33, P29

[6]

Northcliffe L. S., 1970, NUCL DATA A, V7, P233

[7] RBS ANALYSIS OF ALXGA1-XAS LAYERS USING 30 MEV O-16 IONS [J].

OSTLING, M ;

PETERSSON, CS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 4 (01) :88-91

[8] COMPARISON OF BACKSCATTERING PARAMETERS USING HIGH-ENERGY OXYGEN AND HELIUM IONS [J].

PETERSSON, S ;

TOVE, PA ;

MEYER, O ;

SUNDQVIST, B ;

JOHANSSON, A .

THIN SOLID FILMS, 1973, 19 (01) :157-164

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