Effect of Cl incorporation on the stability of hydrogenated amorphous silicon

被引：9

作者：

Byun, JS

Jeon, HB

Lee, KH

Jang, J

机构：

[1] Department of Physics, Kyung Hee University, Dongdaemoon-ku

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期

关键词：

D O I：

10.1063/1.115383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon (alpha-Si:H) films were prepared by remote plasma chemical vapor deposition (RPCVD) using SiH4/SiH2Cl2/He/H-2 mixtures. With increasing Cl content in alpha-Si:H up to about 10(19) cm(-3), the stablity of photoconductivity under light illumination was improved with keeping the defect density and Urbach energy constant. We deposited hydrogenated amorphous silicon films with hydrogen content of 6 at. %, Cl content of similar to 10(19) cm(-3), and defect density of 3x10(15) cm(-3), which exhibited very small photoconductivity degradation under light illumination. The optimum Cl concentration in alpha-Si:H for stable alpha-Si:H appears to be similar to 10(19) cm(-3). (C) 1995 American Institute of Physics.

引用

页码：3786 / 3788

页数：3

共 9 条

[1]

BULLOCK JN, 1994, MATER RES SOC SYMP P, V336, P97, DOI 10.1557/PROC-336-97

[2] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].