OPTICAL-PROPERTIES OF SEMICONDUCTOR SUPERLATTICE

被引：39

作者：

TSU, R ^{[1
]}

KOMA, A ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 02期

关键词：

D O I：

10.1063/1.321655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：842 / 845

页数：4

共 12 条

[1] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J].

CASEY, HC ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4910-&

[2] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[3] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, LL ;

ESAKI, L ;

HOWARD, WE ;

LUDEKE, R ;

SCHUL, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05) :655-662

[4] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].

ESAKI, L ;

CHANG, LL .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498

[5] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[6]

ESAKI L, 1972, 11TH P INT C PHYS SE, P431

[7]

ESAKI L, 1974, APPL PHYS S, V43, P452

[8]

KAZARINOV RF, 1971, SOV PHYS SEMICOND+, V5, P710

[9]

ONTON A, 1970, 10TH P INT C PHYS SE, P107

[10] OPTICAL PROPERTIES OF SEMICONDUCTORS [J].

PHILIPP, HR ;

EHRENREICH, H .

PHYSICAL REVIEW, 1963, 129 (04) :1550-&

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