THRESHOLD DEPENDENCY ON PHOTON ENERGY IN GAAS LASER DIODES

[1] GONDA T, 1965, J QUANT ELECTRON, V1, P159

[2] GONDA T, 1964, OCT IEEE EL DEV M WA

[3] LAMORTE MF, 1965, J QUANT ELECTRON, V1, P103

[4] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 58 - 61

[5] PILKUHM MH, 1965, J QUANT ELECTRON, V1, P184

[6] EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 905 - 909

[7] ABSORPTION DATA OF LASER-TYPE GAAS AT 300 DEGREES + 77 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 350 - &

[1] GONDA T, 1965, J QUANT ELECTRON, V1, P159

[2] GONDA T, 1964, OCT IEEE EL DEV M WA

[3] LAMORTE MF, 1965, J QUANT ELECTRON, V1, P103

[4] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 58 - 61

[5] PILKUHM MH, 1965, J QUANT ELECTRON, V1, P184

[6] EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 905 - 909

[7] ABSORPTION DATA OF LASER-TYPE GAAS AT 300 DEGREES + 77 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 350 - &