DC AND AC CHARACTERISTICS OF A NONALLOYED DELTA-DOPED MESFET BY ATOMIC LAYER EPITAXY

被引：6

作者：

HASHEMI, M ^{[1
]}

MCDERMOTT, B ^{[1
]}

MISHRA, UK ^{[1
]}

RAMDANI, J ^{[1
]}

MORRIS, A ^{[1
]}

HAUSER, JR ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.82053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the growth and fabrication of a nonalloyed delta-doped FET entirely grown by atomic layer epitaxy (ALE). The dc and RF performances were comparable to similar devices fabricated on materials grown by other techniques. FET's having a gate length of 1.5-mu-m showed transconductances as high as 144 mS/mm at a current density of 460 mA/mm. The breakdown voltage for these devices was between 20 and 25 V for a gate-to-drain spacing of 1.6-mu-m. An f(T) and f(max) of 13 and 19 GHz were obtained, respectively. These values are among the highest values reported for MESFET's with similar geometry.

引用

页码：258 / 260

页数：3

共 7 条

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