EXTREMELY LOW-LEAKAGE GAAS P-I-N JUNCTIONS AND MEMORY CAPACITORS GROWN BY ATOMIC LAYER EPITAXY

被引：13

作者：

BEDAIR, SM ^{[1
]}

MCDERMOTT, BT ^{[1
]}

REID, KG ^{[1
]}

NEUDECK, PG ^{[1
]}

COOPER, JA ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 06期

关键词：

D O I：

10.1109/55.55274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic layer epitaxy (ALE) has been employed in the fabrication of extremely low reverse leakage P-i-N junctions. Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of less than 50 pA/cm2 at 1-V reverse bias for a 160 × 140-μm2 capacitor. These storage times are comparable to those of the best MBE-grown structures reported to date. For the diodes tested, which range in size from 4 × 10-4 to 4.9 × 10 -5 cm3, leakage is dominated by generation around the etched diode perimeter. The relatively small bulk generation current is evidence of the high quality of the ALE-grown junctions. © 1990 IEEE

引用

页码：261 / 263

页数：3

共 13 条

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