OBSERVATIONS ON THE PHASE-TRANSFORMATION AND ITS EFFECT ON THE RESISTIVITY OF WSI2 FILMS PREPARED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

FANG, YK

HSU, SL

机构：

来源：

关键词：

D O I：

10.1063/1.335192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2980 / 2982

页数：3

共 7 条

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DEMPSEY, J ;

HAMMER, W ;

DHEURLE, F ;

PETERSSON, S ;

SERRANO, C .

[2]

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[3]

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[4] HEXAGONAL WSI2 IN CO-SPUTTERED (TUNGSTEN AND SILICON) MIXTURE [J].

MURARKA, SP ;

READ, MH ;

CHANG, CC .

[5]

SZE SM, 1983, VLSI TECHNOLOGY, pCH9

[6]

WITTMER M, 1978, J APPL PHYS, V49, P5829

[7]

11195 STAND DIFFR PO