HEXAGONAL WSI2 IN CO-SPUTTERED (TUNGSTEN AND SILICON) MIXTURE

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[2] DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517

[3] FRASER D, UNPUBLISHED

[4] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 482 - 489

[5] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 450 - 454

[6] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[7] THIN-FILM INTERACTION IN ALUMINUM AND PLATINUM [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5175 - 5181

[8] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[9] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1593 - 1598

[10] COSPUTTERED MOLYBDENUM SILICIDES ON THERMAL SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5380 - 5385

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[2] DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517

[3] FRASER D, UNPUBLISHED

[4] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 482 - 489

[5] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 450 - 454

[6] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[7] THIN-FILM INTERACTION IN ALUMINUM AND PLATINUM [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5175 - 5181

[8] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[9] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1593 - 1598

[10] COSPUTTERED MOLYBDENUM SILICIDES ON THERMAL SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5380 - 5385