SIMPLE THEORY FOR THE SPECTRAL PROPERTIES OF SEMICONDUCTOR-LASERS WITH REDUCED REFLECTIVITY

被引:3
作者
BUUS, J
机构
来源
IEE PROCEEDINGS-J OPTOELECTRONICS | 1986年 / 133卷 / 02期
关键词
D O I
10.1049/ip-j.1986.0018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:121 / 123
页数:3
相关论文
共 11 条
[1]   A THEORETICAL AND EXPERIMENTAL INVESTIGATION OF FABRY-PEROT SEMICONDUCTOR-LASER AMPLIFIERS [J].
BUUS, J ;
PLASTOW, R .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :614-618
[3]   CONTROL OF FACET DAMAGE IN GAAS LASER DIODES [J].
ETTENBERG, M ;
SOMMERS, HS ;
KRESSEL, H ;
LOCKWOOD, HF .
APPLIED PHYSICS LETTERS, 1971, 18 (12) :571-+
[4]  
ETTENBERG M, 1981, IEEE J QUANTUM ELECT, V17, P2211, DOI 10.1109/JQE.1981.1070671
[5]  
LAU KY, 1984, IEEE J QUANTUM ELECT, V20, P71
[6]   A THEORY OF LONGITUDINAL MODES IN SEMICONDUCTOR-LASERS [J].
LAU, KY ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1982, 40 (09) :763-765
[7]   SUPERLUMINESCENT DAMPING OF RELAXATION RESONANCE IN THE MODULATION RESPONSE OF GAAS-LASERS [J].
LAU, KY ;
URY, I ;
BARCHAIM, N ;
HARDER, C ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1983, 43 (04) :329-331
[8]   CHANNELED SUBSTRATE NARROW STRIPE GAAS-(GAAL)AS LASERS WITH QUARTER-WAVELENGTH FACET COATINGS [J].
PLUMB, RG ;
CURTIS, JP .
ELECTRONICS LETTERS, 1980, 16 (18) :706-707
[9]   ANALYSIS OF THE EFFECT OF SPONTANEOUS-EMISSION COUPLING ON THE NUMBER OF EXCITED LONGITUDINAL MODES IN SEMICONDUCTOR-LASERS [J].
RENNER, D ;
CARROLL, JE .
ELECTRONICS LETTERS, 1978, 14 (24) :779-781
[10]   ANALYSIS OF DIODE-LASER PROPERTIES [J].
STREIFER, W ;
SCIFRES, DR ;
BURNHAM, RD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (11) :1918-1929