A THEORY OF LONGITUDINAL MODES IN SEMICONDUCTOR-LASERS

被引：28

作者：

LAU, KY ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：763 / 765

页数：3

共 14 条

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[3]

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[7] SINGLE-GROWTH EMBEDDED EPITAXY ALGAAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS [J].

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CHEN, PC ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :987-989

[8] TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :427-431

[9] CHANNELED SUBSTRATE NARROW STRIPE GAAS-(GAAL)AS LASERS WITH QUARTER-WAVELENGTH FACET COATINGS [J].

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[10]

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