SINGLE-GROWTH EMBEDDED EPITAXY ALGAAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS

被引：2

作者：

KATZ, J

MARGALIT, S

WILT, D

CHEN, PC

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期

关键词：

D O I：

10.1063/1.91743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：987 / 989

页数：3

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