ANALYSIS OF DIODE-LASERS WITH LATERAL SPATIAL VARIATIONS IN THICKNESS

被引：17

作者：

STREIFER, W

BURNHAM, RD

SCIFRES, DR

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期

关键词：

D O I：

10.1063/1.91795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：121 / 123

页数：3

共 12 条

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APPLIED PHYSICS LETTERS, 1979, 35 (10) :734-736

[5]

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APPLIED PHYSICS LETTERS, 1978, 32 (01) :55-57

[7] TRANSVERSE-MODE STABILIZED ALGAAS-GAAS PLANO-CONVEX WAVE-GUIDE LASER MADE BY A SINGLE-STEP LIQUID-PHASE EPITAXY [J].

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NISHIDA, K .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :121-123

[8] CHANNELLED-SUBSTRATE NARROW-STRIPE GAAS-GAAIAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS [J].

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ELECTRONICS LETTERS, 1979, 15 (25) :824-826

[9] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS [J].

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4578-4589

[10] APPLICATION OF THE EQUIVALENT-INDEX METHOD TO DH DIODE-LASERS [J].

STREIFER, W ;

KAPON, E .

APPLIED OPTICS, 1979, 18 (22) :3724-3725

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