INFLUENCE OF IMPURITY ABSORPTION ON GERMANIUM HOT-HOLE LASER SPECTRA

被引：15

作者：

HEISS, W ^{[1
]}

UNTERRAINER, K ^{[1
]}

GORNIK, E ^{[1
]}

HANSEN, WL ^{[1
]}

HALLER, EE ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5S/064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the stimulated emission spectra of p-Ge hot-hole lasers, To clarify the influence of impurity absorption we use for the first time a Tl-doped p-Ge laser. Since we observe a clear difference between the spectrum of this laser and that of normally used Ga-doped lasers with respect to the 'emission gap' and to the low-frequency range, we can give definite evidence that impurity transitions are involved in the lasing process.

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页码：638 / 640

页数：3

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