RELIABILITY CHARACTERISTICS OF OHMIC CONTACTS FOR ALGAAS/GAAS HBTS

被引：3

作者：

NOZU, T

IIZUKA, N

KURIYAMA, Y

HONGO, S

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwaiku, Kawasaki, 210, 1, Komukai Toshiba-cho

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 23期

关键词：

HETEROJUNCTION BIPOLAR TRANSISTORS; OHMIC CONTACTS; RELIABILITY;

D O I：

10.1049/el:19931382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal stability of ohmic contacts for AlGaAs/GaAs HBTs is presented. Ti/Pt/Au, Ti/Pt/Au and Cr/Pt/Au, and AuGe/Ni/Ti/Pt/Au were investigated for emitter, base, and collector contacts, respectively. As a result of 200-degrees-C storage tests, it was found that these contacts did not limit the reliability of AlGaAs/GaAs HBTs.

引用

页码：2069 / 2070

页数：2

共 8 条

[1]

AKAGI J, 1990, IEEE GAAS IC S, P45

[2]

HAFIZI ME, 1990, IEEE GAAS IC S, P329

[3] AU/PT/TI CONTACTS TO P-IN0.53GA0.47AS AND N-INP LAYERS FORMED BY A SINGLE METALLIZATION COMMON STEP AND RAPID THERMAL-PROCESSING [J].