INVESTIGATION OF POLYCRYSTALLINE SILICON DEPOSITION ON GLASS SUBSTRATES

被引:26
作者
SHI, ZR
YOUNG, TL
ZHENG, GF
GREEN, MA
机构
[1] Centre for Photovoltaic Devices and Systems, University of New South Wales, Kensington
基金
澳大利亚研究理事会;
关键词
D O I
10.1016/0927-0248(93)90006-O
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Borosilicate glass has been chosen as substrate for solution growth of silicon due to its potential role as the superstrate of a solar module. Several approaches has been used to deposit polycrystalline silicon layer from solution on to glass substrates, namely, silicon particle seeded growth, growth on alpha-silicon coated glass substrates and growth on bare glass from the solutions containing Al or Mg. Large grain polycrystalline silicon crystals have been grown on glass substrates previously seeded by silicon particles. Continuous silicon thin films have been deposited onto alpha-silicon coated glass substrates. For the third approach, impinging growth of silicon layers has been obtained on sandblasted glass substrates from solutions containing Al and Mg at temperatures below 600-degrees-C, if the concentration of Al and Mg in the solution and the contact time between the solution and the substrate are appropriately adjusted. Large grain continuous silicon thin films with an area of 10 cm2 have also been grown on glass substrates at temperatures around the softening points of the glass.
引用
收藏
页码:51 / 60
页数:10
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