SILICON DEPOSITION IN DIODE AND HOLLOW-CATHODE SYSTEMS

被引：10

作者：

HORWITZ, CM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：443 / 449

页数：7

共 18 条

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[9] REACTIVE SPUTTER ETCHING OF SI, SIO2, CR, AL, AND OTHER MATERIALS WITH GAS-MIXTURES BASED ON CF4 AND CL2 [J].

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