THEORETICAL-STUDY OF H-P AND H-B COMPLEXES IN SILICON

被引:19
作者
ZHOU, Y
LUCHSINGER, R
MEIER, PF
机构
[1] Physics Institute, University of Zurich
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 07期
关键词
D O I
10.1103/PhysRevB.51.4166
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microscopic structures of hydrogen in donor- and acceptor-doped silicon have been studied with ab initio calculations based on the density-functional theory. Some results are found to have a strong dependence on the supercell size. By using a 64-atom supercell and a large plane-wave basis set (with a 22-Ry kinetic-energy cutoff), quantitative agreements with existing experimental data have been achieved for the equilibrium geometries and vibrational properties of Si-H-P and Si-H-B systems. The investigation also predicts a low vibrational frequency for the H-wagging mode in the Si-H-B complex. © 1995 The American Physical Society.
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页码:4166 / 4171
页数:6
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