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Optimisation of indium tin oxide thin films for photovoltaic applications

被引：41
作者：
Martinez, MA
Herrero, J
Gutierrez, MT
机构：
[1] Institute de Energías Renovables (CIEMAT), E-28040 Madrid
来源：
THIN SOLID FILMS | 1995年 / 269卷 / 1-2期
关键词：
indium oxide; semiconductors; solar cells; sputtering;
D O I：
10.1016/0040-6090(95)06873-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of deposition parameters on optoelectronic and structural properties of Sn-doped In2O3 thin films grown by r.f. magnetron sputtering has been investigated. Two different targets, In/Sn (95/5 at.%) and In2O3:SnO2 (95/5 wt.%) have been studied in order to compare resulting samples and try to reduce the substrate temperature down to room temperature. By using the In/Sn target, transparent conductive indium tin oxide has been obtained at a substrate temperature of 400 degrees C, with T = 80-90% and rho similar to 10(-4) Omega cm. Meanwhile, low sheet resistance, 5-15 Omega/square, and high transmittance in the visible range, 80-90%, have been measured for ITO coatings made at room temperature with the oxidized target, by introducing very low O-2 mass-flow rates in the sputtering chamber.
引用
收藏
页码：80 / 84
页数：5
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