FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING

被引：19

作者：

HAN, LK

YOON, GW

KIM, J

YAN, J

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 08期

关键词：

D O I：

10.1109/55.400734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality, ultrathin (<30 Angstrom) SiO2/Si3N4 (ON) stacked film capacitors have been fabricated by ill situ rapid-thermal multiprocessing. Si3N4 film was deposited on the RTN-treated poly-Si by rapid-thermal chemical vapor deposition (RTCVD) using SiH4 and NH3, followed by in situ low pressure rapid-thermal reoxidation in N2O (LRTNO) or in O-2 (LRTO) ambient, While the use of low pressure reoxidation suppresses severe oxidation of ultrathin Si3N4 film, the use of N2O-reoxidation significantly improves the quality of ON stacked film, resulting in ultrathin ON stacked film capacitors with excellent electrical properties and reliability,

引用

页码：348 / 350

页数：3

共 13 条

[1]

AJIKA N, 1991, S VLSI, P63

[2] ULTRATHIN SILICON-NITRIDE FILMS PREPARED BY COMBINING RAPID THERMAL NITRIDATION WITH LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].