INTERFACE TRAPS CAUSED BY GE PRE-AMORPHIZATION

被引：3

作者：

WEN, DS ^{[1
]}

LIU, J ^{[1
]}

OSBURN, CM ^{[1
]}

WORTMAN, JJ ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 10期

关键词：

D O I：

10.1149/1.2113613

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2514 / 2516

页数：3

共 5 条

[1]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[2] GERMANIUM IMPLANTATION INTO SILICON - AN ALTERNATE PRE-AMORPHIZATION RAPID THERMAL ANNEALING PROCEDURE FOR SHALLOW JUNCTION FORMATION [J].

SADANA, DK ;

MASZARA, W ;

WORTMANN, JJ ;

ROZGONYI, GA ;

CHU, WK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :943-945

[3]

Seidel T. E., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P201

[4] RAPID THERMAL ANNEALING OF BF2+ IMPLANTED, PREAMORPHIZED SILICON [J].

SEIDEL, TE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :353-355

[5]

SULLIVAN WH, 1957, TRILINEAR CHART NUCL

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