HIGH CW OUTPUT POWER AND WALLPLUG EFFICIENCY AL-FREE INGAAS/INGAASP/INGAP DOUBLE-QUANTUM-WELL DIODE-LASERS

被引：11

作者：

MAWST, LJ

BHATTACHARYA, A

NESNIDAL, M

LOPEZ, J

BOTEZ, D

MORRIS, JA

ZORY, P

机构：

[1] LDX OPTRON,ORLANDO,FL 32809

[2] UNIV FLORIDA,GAINESVILLE,FL 32611

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 14期

关键词：

SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19950812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

2WCW output power has been obtained (driver-limited) from aluminum-free, strained-layer double quantum well (DQW) InGaAs/InGaAsP/InGaP uncoated 'broad area' diode lasers (lambda = 0.96 mu m) grown by low pressure MOCVD. Power conversion ('wallplug') efficiencies of 43.3% are achieved at 1.6W CW output power. The combination of high bandgap (1.62eV) InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence of both the threshold current and the external differential quantum efficiency.

引用

页码：1153 / 1154

页数：2

共 6 条

[1] HIGH-POWER 0.8 MICRO-M INGAASP-GAAS SCH SQW LASERS [J].