FACET DEGRADATION OF AGED STRAINED-QUANTUM-WELL LASERS STUDIED BY HIGH-VOLTAGE ELECTRON-BEAM-INDUCED CURRENT

被引：7

作者：

WANG, MC

HWANG, DM

LIN, PSD

DECHIARO, L

ZAH, CE

OVADIA, S

LEE, TP

DARBY, D

机构：

[1] BELLCORE,RED BANK,NJ 07701

[2] LASERTRON,BURLINGTON,MA 01803

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 23期

关键词：

D O I：

10.1063/1.111346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 mum lasers with identical strained quantum wells (In0.2Ga0.8As) but different cladding layers (Al0.55Ga0.45As versus In0.49Ga0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.

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页码：3145 / 3147

页数：3

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