EBIC AND CL STUDY OF LASER DEGRADATION

被引：2

作者：

HENOC, P ^{[1
]}

BENETTONMARTINS, R ^{[1
]}

AKAMATSU, B ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92120 BAGNEUX,FRANCE

来源：

JOURNAL DE PHYSIQUE IV | 1991年 / 1卷 / C6期

关键词：

D O I：

10.1051/jp4:1991647

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The first stages of Ga(Al)As laser degradation are studied by means of Cl and EBIC measurements on cleaved facets of devices. Degradation by electron beam irradiation is compared to degradation during working. It is concluded that degradation starts in the depleted region with a loss of Si dopant electrical activity. Local degradation speed for Ga(Al)As epitaxial layers grown on either GaAs or Si substrates are compared.

引用

页码：317 / 322

页数：6

共 19 条

[1]

AKAMATSU B, 1989, J MICROSC SPECTROSC, V14, pA12

[2]

BENETTONMARTINS R, 1991, THESIS U PARIS 11

[3] 12 GHZ HIGH-POWER GAAS/SI MESFETS [J].

CHARASSE, MN ;

BARTENLIAN, B ;

GERARD, B ;

HIRTZ, JP ;

LAVIRON, M ;

DEPARSCAU, AM ;

DEREVONKO, M ;

DELAGEBEAUDEUF, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1896-L1898

[4] LOW-THRESHOLD (APPROXIMATELY-600 A/CM2 AT ROOM-TEMPERATURE) GAAS/AIGAAS LASERS ON SI (100) [J].

CHEN, HZ ;

GHAFFARI, A ;

WANG, H ;

MORKOC, H ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1320-1321

[5]

ESWAR C, 1989, APPL PHYS LETT, V54, P2683

[6] CARRIER TRAPPING IN SINGLE QUANTUM-WELLS WITH DIFFERENT CONFINEMENT STRUCTURES [J].

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

LEO, K ;

POLLAND, HJ ;

PLOOG, K ;

FUJIWARA, K ;

NAKAYAMA, T .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :226-228

[7] GENERATION OF POINT-DEFECTS IN GAAS BY ELECTRON-HOLE RECOMBINATION AT DISLOCATIONS [J].

HUTCHINSON, PW ;

DOBSON, PS ;

WAKEFIELD, B ;

OHARA, S .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1413-&

[8]

HUTCHINSON PW, 1980, PHILOS MAG A, V1, P601

[9] DEEP LEVEL ASSOCIATED WITH SLOW DEGRADATION OF GAALAS DH LASER-DIODES [J].

IMAI, H ;

ISOZUMI, K ;

TAKUSAGAWA, M .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :330-332

[10] ANNEALING EFFECT IN SI-DOPED GAAS AND ALGAAS LAYERS GROWN BY MBE [J].

ISHIKAWA, T ;

INATA, T ;

KONDO, K ;

SHIBATOMI, A .

ELECTRONICS LETTERS, 1986, 22 (04) :189-190

← 1 2 →