12 GHZ HIGH-POWER GAAS/SI MESFETS

被引：15

作者：

CHARASSE, MN ^{[1
]}

BARTENLIAN, B ^{[1
]}

GERARD, B ^{[1
]}

HIRTZ, JP ^{[1
]}

LAVIRON, M ^{[1
]}

DEPARSCAU, AM ^{[1
]}

DEREVONKO, M ^{[1
]}

DELAGEBEAUDEUF, D ^{[1
]}

机构：

[1] THOMSON COMPOSANTS MICROONDES, F-91401 ORSAY, FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.L1896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1896 / L1898

页数：3

共 11 条

[1] PERFORMANCE OF QUARTER-MICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES [J].

AKSUN, MI ;

MORKOC, H ;

LESTER, LF ;

DUH, KHG ;

SMITH, PM ;

CHAO, PC ;

LONGERBONE, M ;

ERICKSON, LP .

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[2]

BARTENLIAN B, 1989, UNPUB 5TH EUR WORKSH

[3] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J].

FISCHER, RJ ;

CHAND, N ;

KOPP, WF ;

PENG, CK ;

MORKOC, H ;

GLEASON, KR ;

SCHEITLIN, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) :206-213

[4] GROWTH AND CHARACTERIZATION OF GAAS-LAYERS ON SI SUBSTRATES BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY [J].

KIM, JH ;

LIU, JK ;

RADHAKRISHNAN, G ;

KATZ, J ;

SAKAI, S ;

CHANG, SS ;

ELMASRY, NA .

APPLIED PHYSICS LETTERS, 1988, 53 (24) :2435-2437

[5]

ONOMATA H, 1986, GALLIUM ARSENIDE REL, P491

[6]

ROCHER A, 1989, P C DEFECT ENG SEMIC

[7] CONTROLLED FORMATION OF MISFIT DISLOCATIONS FOR HETEROEPITAXIAL GROWTH OF GAAS ON (100) SI BY MIGRATION-ENHANCED EPITAXY [J].

STOLZ, W ;

HORIKOSHI, Y ;

NAGANUMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06) :L1140-L1143

[8] INITIAL GROWTH-CONDITIONS OF GAAS ON (100)SI GROWN BY MIGRATION-ENHANCED EPITAXY [J].

STOLZ, W ;

NAGANUMA, M ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (03) :L283-L286

[9] MICROWAVE MESFETS FABRICATED IN GAAS-LAYERS GROWN ON SOS SUBSTRATES [J].

TURNER, GW ;

CHOI, HK ;

TSAUR, BY .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :460-462

[10] NEW APPROACH TO GROWTH OF HIGH-QUALITY GAAS-LAYERS ON SI SUBSTRATES [J].

VARRIO, J ;

ASONEN, H ;

SALOKATVE, A ;

PESSA, M ;

RAUHALA, E ;

KEINONEN, J .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1801-1803

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