NEW APPROACH TO GROWTH OF HIGH-QUALITY GAAS-LAYERS ON SI SUBSTRATES

被引：22

作者：

VARRIO, J ^{[1
]}

ASONEN, H ^{[1
]}

SALOKATVE, A ^{[1
]}

PESSA, M ^{[1
]}

RAUHALA, E ^{[1
]}

KEINONEN, J ^{[1
]}

机构：

[1] HELSINKI UNIV,ACCELERATOR LAB,SF-00550 HELSINKI,FINLAND

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 22期

关键词：

D O I：

10.1063/1.98527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1801 / 1803

页数：3

共 21 条

[1] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].

BIEGELSEN, DK ;

PONCE, FA ;

SMITH, AJ ;

TRAMONTANA, JC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[3] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[4]

Chu W. K., 1978, BACKSCATTERING SPECT

[5] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[6] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

CHAND, N ;

KOPP, W ;

MORKOC, H ;

ERICKSON, LP ;

YOUNGMAN, R .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :397-399

[7] ATOMIC LAYER EPITAXY [J].

GOODMAN, CHL ;

PESSA, MV .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :R65-R81

[8] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870

[9] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION [J].

HULL, R ;

FISCHERCOLBRIE, A .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :851-853

[10]

ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183

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