INITIAL GROWTH-CONDITIONS OF GAAS ON (100)SI GROWN BY MIGRATION-ENHANCED EPITAXY

被引：31

作者：

STOLZ, W ^{[1
]}

NAGANUMA, M ^{[1
]}

HORIKOSHI, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, BASIC RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 03期

关键词：

D O I：

10.1143/JJAP.27.L283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L283 / L286

页数：4

共 13 条

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[7]

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