MICROWAVE MESFETS FABRICATED IN GAAS-LAYERS GROWN ON SOS SUBSTRATES

被引：6

作者：

TURNER, GW

CHOI, HK

TSAUR, BY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 10期

关键词：

D O I：

10.1109/EDL.1987.26694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：460 / 462

页数：3

共 13 条

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

APPLIED PHYSICS LETTERS, 1975, 27 (06) :325-327

[2]

CHOI HK, 1986, P MAT RES SOC S, V67, P165

[3] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J].

FISCHER, RJ ;

CHAND, N ;

KOPP, WF ;

PENG, CK ;

MORKOC, H ;

GLEASON, KR ;

SCHEITLIN, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) :206-213

[4] EPITAXIAL GROWTH OF GAAS ON INSULATING SUBSTRATES USING HCL-H2 VAPOR TRANSPORT [J].

GUTIERREZ, WA ;

POMMERRENIG, HD ;

JASPER, MA ;

MANTZOURANIS, AP .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1199-+

[5] MATERIAL AND DEVICE PROPERTIES OF GAAS ON SAPPHIRE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KASAI, K ;

NAKAI, K ;

OZEKI, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :1-5

[6]

LAIGHTON D, 1980, P GOV MICROCIRCUIT A, V8, P299

[7] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J].

MANASEVIT, HM .

APPLIED PHYSICS LETTERS, 1968, 12 (04) :156-+

[8]

Mayer D. C., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P676

[9] EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE [J].

RAICHOUDBURY, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1745-+

[10] MATERIAL AND DEVICE PROPERTIES OF HETEROEPITAXIAL GAAS ON BEO [J].

THORSEN, AC ;

MANASEVIT, HM ;

HARADA, RH .

SOLID-STATE ELECTRONICS, 1974, 17 (08) :855-+

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