MATERIAL AND DEVICE PROPERTIES OF GAAS ON SAPPHIRE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10

作者：

KASAI, K

NAKAI, K

OZEKI, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1 / 5

页数：5

共 9 条

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