NUMERICAL-ANALYSIS OF THE ABSORPTION AND THE REFRACTIVE-INDEX CHANGE IN ARBITRARY SEMICONDUCTOR QUANTUM-WELL STRUCTURES

被引：41

作者：

NAKAMURA, K ^{[1
]}

SHIMIZU, A ^{[1
]}

FUJII, K ^{[1
]}

KOSHIBA, M ^{[1
]}

HAYATA, K ^{[1
]}

机构：

[1] HOKKAIDO UNIV,DEPT ELECTR ENGN,KITA KU,SAPPORO,HOKKAIDO 060,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 07期

关键词：

D O I：

10.1109/3.142554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a numerical method for the analysis of the absorption spectrum and the refractive index change due to an external electric field in quantum-well structures. First, the finite-element method and the variational method are used to obtain the subband and the exciton energies in a quantum-well structure, respectively. Next, we calculate the absorption spectrum due to the band-to-band and the excitonic transitions. Finally, the refractive index change is obtained using the Kramers-Kronig relations. This method is applicable to the quantum-well structures with arbitrary potential profiles made of arbitrary semiconductors, because it is based on the finite-element method in which the general boundary condition for the heterointerface is employed. The validity of the present method is confirmed by comparing the computed results with the measured ones. A noteworthy asymmetric coupled quantum-well structure which has a large nonlinearity in the electric field dependence of the absorption coefficient is also proposed and analyzed.

引用

页码：1670 / 1677

页数：8

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