REMOTE GATE CAPACITANCE-VOLTAGE STUDIES FOR NONINVASIVE SURFACE CHARACTERIZATION

被引：1

作者：

CHANG, RR ^{[1
]}

LILE, DL ^{[1
]}

GANN, R ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,FT COLLINS ENGN OPERAT,FT COLLINS,CO 80525

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：987 / 989

页数：3

相关论文

共 5 条

[1] SURFACE CHARACTERIZATION OF INP USING PHOTOLUMINESCENCE
CHANG, RR
IYER, R
LILE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1995 - 2004
[2] RELAXATION TIME OF SURFACE STATES ON GERMANIUM
KINGSTON, RH
MCWHORTER, AL
[J]. PHYSICAL REVIEW, 1956, 103 (03): : 534 - 540
[3] PHOTOLUMINESCENCE AND X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS OF INP SURFACE TREATED BY ACID AND BASE SOLUTIONS
KRAWCZYK, SK
HOLLINGER, G
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (08) : 870 - 872
[4] Many A., 1965, SEMICONDUCTOR SURFAC
[5] AIR AS AN ADJUSTABLE INSULATOR FOR C-V AND G-V ANALYSIS OF SEMICONDUCTOR SURFACES
MORELAND, J
DRUCKER, J
HANSMA, PK
KOTTHAUS, JP
ADAMS, A
KVAAS, R
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 104 - 106