PHOTOLUMINESCENCE AND X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS OF INP SURFACE TREATED BY ACID AND BASE SOLUTIONS

被引：48

作者：

KRAWCZYK, SK

HOLLINGER, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.95437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：870 / 872

页数：3

相关论文

共 7 条

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES
ASPNES, DE
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 406 - 421
[2] CHEMICAL CLEANING OF INP SURFACES - OXIDE COMPOSITION AND ELECTRICAL-PROPERTIES
GUIVARCH, A
LHARIDON, H
PELOUS, G
HOLLINGER, G
PERTOSA, P
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1139 - 1148
[3] HOLLINGER G, UNPUB
[4] PROCESSING OF INP MIS DEVICES MONITORED VIA PHOTOLUMINESCENCE MEASUREMENTS
KRAWCZYK, S
BAILLY, B
SAUTREUIL, B
BLANCHET, R
VIKTOROVITCH, P
[J]. ELECTRONICS LETTERS, 1984, 20 (06) : 255 - 256
[5] AL-AL2O3-INP STRUCTURES - STUDY OF DRIFT PHENOMENA AND BARRIER HEIGHT DETERMINATION FROM INTERNAL PHOTOEMISSION
KRAWCZYK, S
SAUTREUIL, B
VIKTOROVITCH, P
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (12): : 763 - 767
[6] EFFECTS OF ETCHING PROCEDURES OF INP AND OF INSULATOR DEPOSITION TECHNIQUES ON ELECTRICAL-PROPERTIES OF METAL-ALUMINA-INP STRUCTURES
SAUTREUIL, B
BAILLY, B
BLANCHET, R
GARRIGUES, M
VIKTOROVITCH, P
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (12): : 769 - 773
[7] SAUTREUIL B, UNPUB