EFFECTS OF ETCHING PROCEDURES OF INP AND OF INSULATOR DEPOSITION TECHNIQUES ON ELECTRICAL-PROPERTIES OF METAL-ALUMINA-INP STRUCTURES

被引：5

作者：

SAUTREUIL, B

BAILLY, B

BLANCHET, R

GARRIGUES, M

VIKTOROVITCH, P

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1983年 / 18卷 / 12期

关键词：

D O I：

10.1051/rphysap:019830018012076900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：769 / 773

页数：5

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