学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
IMPROVED ROOM-TEMPERATURE LASER PERFORMANCE IN GAAS DIFFUSED-JUNCTION DIODES
被引:25
作者
:
CARLSON, RO
论文数:
0
引用数:
0
h-index:
0
CARLSON, RO
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1967年
/ 38卷
/ 02期
关键词
:
D O I
:
10.1063/1.1709392
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:661 / &
相关论文
共 21 条
[1]
ABRAHAMS MS, 1966, J APPL PHYS, V37, P1963
[2]
OPTIMUM DESIGN FOR A ROOM-TEMPERATURE PULSE-OPERATED GAAS INJECTION LASER - (300 DEGREES K - OUTPUT POWER - QUANTUM EFFICIENCY - E/T)
AKSELRAD, A
论文数:
0
引用数:
0
h-index:
0
AKSELRAD, A
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(10)
: 250
-
&
[3]
BEHAVIOR OF LATTICE DEFECTS IN GAAS
BLANC, J
论文数:
0
引用数:
0
h-index:
0
BLANC, J
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
WEISBERG, LR
BUBE, RH
论文数:
0
引用数:
0
h-index:
0
BUBE, RH
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1964,
25
(02)
: 225
-
&
[4]
CARLSON RO, 1965, J ELECTROCHEM SOC, V112, pC259
[5]
CARLSON RO, 1965, B AM PHYS SOC, V10, P607
[6]
TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T )
DOUSMANIS, GC
论文数:
0
引用数:
0
h-index:
0
DOUSMANIS, GC
STAEBLER, DL
论文数:
0
引用数:
0
h-index:
0
STAEBLER, DL
NELSON, H
论文数:
0
引用数:
0
h-index:
0
NELSON, H
[J].
APPLIED PHYSICS LETTERS,
1964,
5
(09)
: 174
-
&
[7]
ENGELER WE, PRIVATE COMMUNICATIO
[8]
EFFICIENCY MEASUREMENTS ON GAAS ELECTROLUMINESCENT DIODES
GALGINAITIS, SV
论文数:
0
引用数:
0
h-index:
0
GALGINAITIS, SV
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
: 295
-
&
[9]
COHERENT LIGHT EMISSION FROM P-N JUNCTIONS
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
[J].
SOLID-STATE ELECTRONICS,
1963,
6
(05)
: 405
-
&
[10]
DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
: 379
-
&
←
1
2
3
→
共 21 条
[1]
ABRAHAMS MS, 1966, J APPL PHYS, V37, P1963
[2]
OPTIMUM DESIGN FOR A ROOM-TEMPERATURE PULSE-OPERATED GAAS INJECTION LASER - (300 DEGREES K - OUTPUT POWER - QUANTUM EFFICIENCY - E/T)
AKSELRAD, A
论文数:
0
引用数:
0
h-index:
0
AKSELRAD, A
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(10)
: 250
-
&
[3]
BEHAVIOR OF LATTICE DEFECTS IN GAAS
BLANC, J
论文数:
0
引用数:
0
h-index:
0
BLANC, J
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
WEISBERG, LR
BUBE, RH
论文数:
0
引用数:
0
h-index:
0
BUBE, RH
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1964,
25
(02)
: 225
-
&
[4]
CARLSON RO, 1965, J ELECTROCHEM SOC, V112, pC259
[5]
CARLSON RO, 1965, B AM PHYS SOC, V10, P607
[6]
TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T )
DOUSMANIS, GC
论文数:
0
引用数:
0
h-index:
0
DOUSMANIS, GC
STAEBLER, DL
论文数:
0
引用数:
0
h-index:
0
STAEBLER, DL
NELSON, H
论文数:
0
引用数:
0
h-index:
0
NELSON, H
[J].
APPLIED PHYSICS LETTERS,
1964,
5
(09)
: 174
-
&
[7]
ENGELER WE, PRIVATE COMMUNICATIO
[8]
EFFICIENCY MEASUREMENTS ON GAAS ELECTROLUMINESCENT DIODES
GALGINAITIS, SV
论文数:
0
引用数:
0
h-index:
0
GALGINAITIS, SV
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
: 295
-
&
[9]
COHERENT LIGHT EMISSION FROM P-N JUNCTIONS
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
[J].
SOLID-STATE ELECTRONICS,
1963,
6
(05)
: 405
-
&
[10]
DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
: 379
-
&
←
1
2
3
→