PROPERTIES OF TUNGSTEN FILM DEPOSITED ON GAAS BY RF MAGNETRON SPUTTERING

被引：14

作者：

SUSA, N

ANDO, S

ADACHI, S

机构：

[1] NTT, Musashino Electrical, Communication Lab, Musashino, Jpn, NTT, Musashino Electrical Communication Lab, Musashino, Jpn

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 09期

关键词：

D O I：

10.1149/1.2114329

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2245 / 2250

页数：6

共 21 条

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