ANALYSIS OF AN ANOMALOUS SUBTHRESHOLD CURRENT IN A FULLY RECESSED OXIDE MOSFET USING A 3-DIMENSIONAL DEVICE SIMULATOR

被引：3

作者：

SHIGYO, N ^{[1
]}

DANG, R ^{[1
]}

机构：

[1] HOSEI UNIV,COLL ENGN,DEPT ELECT ENGN,KOGANEI,TOKYO 184,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期

关键词：

D O I：

10.1109/JSSC.1985.1052315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：361 / 365

页数：5

共 17 条

[1]

DANG R, 1982, SEP P ICCC NEW YORK, P286

[2] DEVICE MODELING [J].

ENGL, WL ;

DIRKS, HK ;

MEINERZHAGEN, B .

PROCEEDINGS OF THE IEEE, 1983, 71 (01) :10-33

[3] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J].

GREENFIELD, JA ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1520-1532

[4] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) :455-&

[5]

Iizuka T., 1981, International Electron Devices Meeting, P380

[6]

Kurosawa K., 1981, International Electron Devices Meeting, P384

[7] ITERATIVE SOLUTION METHOD FOR LINEAR-SYSTEMS OF WHICH COEFFICIENT MATRIX IS A SYMMETRIC M-MATRIX [J].

MEIJERINK, JA ;

VANDERVORST, HA .

MATHEMATICS OF COMPUTATION, 1977, 31 (137) :148-162

[8]

Shibata T., 1983, International Electron Devices Meeting 1983. Technical Digest, P27

[9] 3-DIMENSIONAL SIMULATION OF INVERSE NARROW-CHANNEL EFFECT [J].

SHIGYO, N ;

KONAKA, M ;

DANG, RLM .

ELECTRONICS LETTERS, 1982, 18 (06) :274-275

[10]

SHIGYO N, 1983, I ELECTRON COMM J, V66, P1035

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