HIGH-CONTRAST OPTICALLY BISTABLE OPTOELECTRONIC SWITCH BASED ON INGAAS/GAAS (100) ASYMMETRIC FABRY-PEROT MODULATOR, DETECTOR, AND RESONANT TUNNELING DIODE

被引：9

作者：

CHEN, L

KAPRE, RM

HU, KZ

MADHUKAR, A

机构：

[1] UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90089

[2] UNIV SO CALIF,DEPT MAT SCI & ENGN,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 13期

关键词：

D O I：

10.1063/1.106270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The realization at room temperature of a high contrast ratio (20:1) and an on-state reflectivity of 46.5% in an optically bistable switch involving strained InGaAs/GaAs (100) multiple-quantum-well-based asymmetric Fabry-Perot reflection modulator, detector, and InGaAs/AlAs-based resonant tunneling diode and an Si field-effect transistor is reported.

引用

收藏

页码：1523 / 1525

页数：3

相关论文

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