A-CENTERS BUILDUP KINETICS IN THE CONDUCTIVE MATRIX OF PULLED N-TYPE SILICON WITH CALCULATION OF THEIR RECHARGES AT DEFECT CLUSTERS

被引：12

作者：

DOLGOLENKO, AP

FISHCHUK, II

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 67卷 / 02期

关键词：

D O I：

10.1002/pssa.2210670207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：407 / 411

页数：5

共 5 条

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DOLGOLENKO, AP ;

FISHCHUK, II .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (02) :751-755

[3] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

GOSSICK, BR .

[4]

Swanson M.L., 1971, RAD EFFECTS SEMICOND, V1st ed., P359

[5] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J].

WATKINS, GD ;

CORBETT, JW ;

WALKER, RM .