THE MONTE-CARLO TRAJECTORY INTEGRAL METHOD

被引:9
作者
SOCHA, JB [1 ]
KRUMHANSL, JA [1 ]
机构
[1] CORNELL UNIV, ATOM & SOLID STATE PHYS LAB, ITHACA, NY 14853 USA
来源
PHYSICA B & C | 1985年 / 134卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90334-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:142 / 147
页数:6
相关论文
共 15 条
[1]   ELECTRON-TRANSPORT IN GAAS N+-P--N+ SUB-MICRON DIODES [J].
ADACHI, S ;
KAWASHIMA, M ;
KUMABE, K ;
YOKOYAMA, K ;
TOMIZAWA, M .
ELECTRON DEVICE LETTERS, 1982, 3 (12) :409-411
[2]   ON THE NATURE OF BALLISTIC TRANSPORT IN SHORT-CHANNEL SEMICONDUCTOR-DEVICES [J].
BARKER, JR ;
FERRY, DK ;
GRUBIN, HL .
ELECTRON DEVICE LETTERS, 1980, 1 (10) :209-210
[3]   THE KINETIC FORMULATION OF CONDUCTION PROBLEMS [J].
CHAMBERS, RG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (390) :458-459
[4]  
CHAMBERS RG, 1980, ELECTRONS FERMI SURF, P102
[5]   DIFFUSION EFFECTS AND BALLISTIC TRANSPORT [J].
COOK, RK ;
FREY, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :951-953
[6]   BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J].
HESS, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :937-940
[7]  
HOLLIS M, 1980, P IEEE INT ELEC DEV
[8]   ELECTRON-ELECTRON INTERACTION AND SCREENING EFFECTS IN HOT-ELECTRON TRANSPORT IN GAAS [J].
INOUE, M ;
FREY, J .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4234-4239
[9]   THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].
JACOBONI, C ;
REGGIANI, L .
REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705
[10]   POLAR MODE SCATTERING IN BALLISTIC TRANSPORT GAAS DEVICES [J].
MALONEY, TJ .
ELECTRON DEVICE LETTERS, 1980, 1 (04) :54-54