ELECTRON-TRANSPORT IN GAAS N+-P--N+ SUB-MICRON DIODES

[1] MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE [J]. ELECTRONICS LETTERS, 1982, 18 (03) : 133 - 135

[2] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1980, 16 (13) : 524 - 525

[3] MEASUREMENT OF J/V CHARACTERISTICS OF A GAAS SUB-MICRON N+-N--N+ DIODE [J]. ELECTRONICS LETTERS, 1982, 18 (13) : 570 - 572

[4] IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 941 - 944

[5] SCHMIDT PE, 1981, ELECTRON DEVIC LETT, V2, P205

[6] GAAS N+-P--N+ BALLISTIC STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (13) : 522 - 523

[7] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683

[1] MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE [J]. ELECTRONICS LETTERS, 1982, 18 (03) : 133 - 135

[2] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1980, 16 (13) : 524 - 525

[3] MEASUREMENT OF J/V CHARACTERISTICS OF A GAAS SUB-MICRON N+-N--N+ DIODE [J]. ELECTRONICS LETTERS, 1982, 18 (13) : 570 - 572

[4] IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 941 - 944

[5] SCHMIDT PE, 1981, ELECTRON DEVIC LETT, V2, P205

[6] GAAS N+-P--N+ BALLISTIC STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (13) : 522 - 523

[7] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683