LONGITUDINAL MODE BEHAVIOR AND TUNABILITY OF SEPARATELY PUMPED (GAAL)AS LASERS

被引：13

作者：

FANG, ZJ ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：13 / 15

页数：3

共 12 条

[1] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J].

AIKI, K ;

NAKAMURA, M ;

KURODA, T ;

UMEDA, J ;

ITO, R ;

CHINONE, N ;

MAEDA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :89-94

[2] ELECTRONIC WAVELENGTH TUNING WITH SEMICONDUCTOR INTEGRATED ETALON INTERFERENCE LASERS [J].

ANTREASYAN, A ;

WANG, S .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :530-532

[3] SINGLE-MODE STABILIZATION BY TRAPS IN SEMICONDUCTOR-LASERS [J].

COPELAND, JA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) :721-727

[4] CURRENT-INDUCED FREQUENCY-MODULATION IN DIODE-LASERS [J].

DANDRIDGE, A ;

GOLDBERG, L .

ELECTRONICS LETTERS, 1982, 18 (07) :302-304

[5] TIME-DEPENDENT THERMAL EFFECTS IN CURRENT-MODULATED SEMICONDUCTOR-LASERS [J].

GOLDBERG, L ;

TAYLOR, HF ;

WELLER, JF .

ELECTRONICS LETTERS, 1981, 17 (14) :497-499

[6] SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS [J].

HENRY, CH ;

LOGAN, RA ;

BERTNESS, KA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4457-4461

[7]

ISMAIL HA, 1983, 4TH INT C INT OPT OP, P196

[8] MODULATION FREQUENCY-CHARACTERISTICS OF DIRECTLY OPTICAL FREQUENCY MODULATED ALGAAS SEMICONDUCTOR-LASER [J].

KOBAYASHI, S ;

YAMAMOTO, Y ;

KIMURA, T .

ELECTRONICS LETTERS, 1981, 17 (10) :350-351

[9] DIRECT FREQUENCY-MODULATION IN ALGAAS SEMICONDUCTOR-LASERS [J].

KOBAYASHI, S ;

YAMAMOTO, Y ;

ITO, M ;

KIMURA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (04) :582-595

[10] CARRIER-INDUCED INDEX CHANGE IN AIGAAS DOUBLE-HETEROSTRUCTURE LASERS [J].

MANNING, JS ;

OLSHANSKY, R .

ELECTRONICS LETTERS, 1981, 17 (14) :506-507

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