POLAR OPTIC PHONON AND GAMMA-]L INTERVALLEY SCATTERING TIMES IN GAAS FROM STEADY-STATE HOT-ELECTRON LUMINESCENCE SPECTROSCOPY

被引:10
作者
HACKENBERG, W
FASOL, G
机构
[1] Cavendish Laboratory, Cambridge CB3 0HE, Madingley Road
关键词
D O I
10.1063/1.103975
中图分类号
O59 [应用物理学];
学科分类号
摘要
We deduce the Γ→L intervalley and polar optic phonon scattering times of hot electrons in bulk GaAs from cw hot (e,A0) luminescence spectra at low excitation densities and their dependence on electron kinetic energy. We obtain the lifetime broadening due to these two processes from comparison with line shape calculations using a 16×16 k center-dot p Hamiltonian, a full integration over k space, and a dipole model for the optical matrix elements. We find for the LO-phonon emission time τLO= (132±10)fs. The threshold for Γ→L scattering is determined as 330±10 meV, above which a distinct decrease in total lifetime is observed. Γ→L scattering times of 150-200 fs are deduced, and we discuss a corresponding deformation potential.
引用
收藏
页码:174 / 176
页数:3
相关论文
共 10 条