INSITU ELLIPSOMETRY STUDIES OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY GLOW-DISCHARGE

被引：11

作者：

COLLINS, RW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573871

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：514 / 517

页数：4

共 12 条

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[4]

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[6] GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA [J].

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PERRIN, J ;

SIEFERT, JM ;

HUC, J ;

LLORET, A ;

DEROSNY, G ;

SCHMITT, JPM .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :801-803

[7] SURFACE-ANALYSIS DURING VAPOR-PHASE GROWTH [J].

HOTTIER, F ;

THEETEN, JB .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) :644-654

[8] MICROSTRUCTURE OF PLASMA-DEPOSITED A-SI-H FILMS [J].

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LUJAN, RA .

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[9]

KNIGHTS JC, 1984, TOPICS APPLIED PHYSI, V55, P6

[10] INTERSPECIMEN COMPARISON OF REFRACTIVE INDEX OF FUSED SILICA [J].

MALITSON, IH .

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