MORPHOLOGICAL AND STRUCTURAL STUDIES OF BETA-FESI2 FILMS GROWN BY ION-BEAM-ASSISTED DEPOSITION

被引：5

作者：

TERRASI, A

RAVESI, S

SPINELLA, C

GRIMALDI, MG

LAMANTIA, A

机构：

[1] SGS THOMSO MICROELECTR,I-95121 CATANIA,ITALY

[2] CNR,IST METODOL & TECNOL MICROELECTR,I-195129 CATANIA,ITALY

来源：

THIN SOLID FILMS | 1994年 / 241卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(94)90423-5

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

In this work we present the application of ion beam assisted deposition (IBAD) to the growth of beta-FeSi2. Iron disilicide films, about 120 nm thick, were obtained by the deposition of Fe onto (001)Si single crystal maintained at T = 600-degrees-C. During evaporation a low energy (120-650 eV) Ar+ ion beam bombarded the growing film. Scanning and transmission electron microscopies were used to characterize respectively the morphology and structure of the deposited layer. A reduction in both the surface roughness and grain size was observed in the IBAD films with respect to those grown by standard deposition techniques. Moreover, a remarkable enhancement of the epitaxy was found for one of the IBAD samples.

引用

页码：188 / 191

页数：4

共 15 条

[1]

A CLARIFICATION OF THE INDEX OF REFRACTION OF BETA-IRON DISILICIDE [J].